Zubehör zu Rangierlokomotive, Elektrolokomotive

Halbleiter-Element der Versuchslokomotive mit PETT Ee 3/3 (Ee 933), von ABB Sécheron

Dating

Versuch 2011–2013

Persons

ABB Asea Brown Boveri AG (1988), Hersteller/in

Description

Halbleiter-Element aus der Versuchslokomotive Ee 933, Nr. 933 001 (97 85 933 001), der ABB Sècheron. Bau der Lok mit ehemaliger Bezeichnung Ee 3/3, Nr. 16'560, 1962/63. Umbau für Versuchszweck durch ABB Sècheron 2011-2013. Bedeutung: Rangierlok mit erstem leistungselektronischem Transformator der Welt.

Signature / Inscription

Signatur / Beschriftung: Beschriftung: "ABB"

Object type

Object (three-dimensional)

Geography

Herstellungsort: Genève/Genf

Material / Technique

Metall, Kunststoff

Dimensions

60 x 80 x 25 cm

Inventory number

VHS-10801.01

Legend

PEBB high-power semiconductor module This power electronic building block (PEBB) is one of nine modules integrated into the power electronic traction transformer (PETT). Each module is loaded with eight HiPak IGBT modules. The use of power semiconductors in a PETT offers a number of benefits, including enhanced efficiency, superb reliability, reduced noise emissions and compact size. The latter means that PETTs can be mounted under the floor or on the roof of the vehicle, thus freeing up space for passengers and reducing the train’s energy consumption. ABB Sécheron Electronic high-power semiconductors Incredible yet true Power semiconductors are designed for the control and switching of high electric currents and voltages. They can transform the voltage, current and frequency of a power system into another system. 36 HiPak IGBT (insulated gate bipolar transistor) modules are enough to furnish a Ge goods locomotive with output power of 6,000 hp. A thumb-sized IGBT chip can, for a short while, deliver power equivalent to that of a Formula-1 racing car. While it does so, the chip surface can heat to 170 °C, appreciably hotter than a stove hotplate. Semiconductor switches are extremely fast compared to mechanical switches. They can switch up to 10,000 times a second. 10,000,000 – An IGBT chip makes a switching error less than once in 10 million hours of operation. 5,760,000,000,000 – An IGBT chip will switch around 5,760 billion times during its service life in a typical industrial application. 230,000,000 – The 230 million or so IGBT cells distributed across the 2,304 chips mounted on 96 HiPak modules in the Siemens Eurosprinter locomotive (picture) deliver 6.4 MW (8,700 hp) of output power.